Ehlen, Niels, Hall, Joshua, Senkovskiy, Boris, V, Hell, Martin, Li, Jun ORCID: 0000-0002-7486-5416, Herman, Alexander, Smirnov, Dmitry, Fedorov, Alexander ORCID: 0000-0002-9228-7082, Voroshnin, Vladimir Yu, Di Santo, Giovanni, Petaccia, Luca, Michely, Thomas and Grueneis, Alexander (2019). Narrow photoluminescence and Raman peaks of epitaxial MoS2 on graphene/Ir(111). 2D Mater., 6 (1). BRISTOL: IOP PUBLISHING LTD. ISSN 2053-1583

Full text not available from this repository.

Abstract

We report on the observation of photoluminescence (PL) with a narrow 18 meV peak width from molecular beam epitaxy grown MoS2 on graphene/lr(1 1 1). This observation is explained in terms of a weak graphene-MoS2 interaction that prevents PL quenching expected for a metallic substrate. The weak interaction of MoS2 with the graphene is highlighted by angle-resolved photoemission spectroscopy and temperature dependent Raman spectroscopy. These methods reveal that there is no hybridization between electronic states of graphene and MoS2 as well as a different thermal expansion of both materials. Molecular beam epitaxy grown MoS2 on graphene is therefore an important platform for optoelectronics which allows for large area growth with controlled properties.

Item Type: Journal Article
Creators:
CreatorsEmailORCIDORCID Put Code
Ehlen, NielsUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Hall, JoshuaUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Senkovskiy, Boris, VUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Hell, MartinUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Li, JunUNSPECIFIEDorcid.org/0000-0002-7486-5416UNSPECIFIED
Herman, AlexanderUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Smirnov, DmitryUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Fedorov, AlexanderUNSPECIFIEDorcid.org/0000-0002-9228-7082UNSPECIFIED
Voroshnin, Vladimir YuUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Di Santo, GiovanniUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Petaccia, LucaUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Michely, ThomasUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Grueneis, AlexanderUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
URN: urn:nbn:de:hbz:38-140855
DOI: 10.1088/2053-1583/aaebd3
Journal or Publication Title: 2D Mater.
Volume: 6
Number: 1
Date: 2019
Publisher: IOP PUBLISHING LTD
Place of Publication: BRISTOL
ISSN: 2053-1583
Language: English
Faculty: Unspecified
Divisions: Unspecified
Subjects: no entry
Uncontrolled Keywords:
KeywordsLanguage
TEMPERATURE-DEPENDENT RAMAN; SINGLE-LAYER MOS2; ELECTRONIC-STRUCTURE; ENERGY-TRANSFER; BANDGAP RENORMALIZATION; THERMAL-CONDUCTIVITY; SCATTERINGMultiple languages
Materials Science, MultidisciplinaryMultiple languages
Refereed: Yes
URI: http://kups.ub.uni-koeln.de/id/eprint/14085

Downloads

Downloads per month over past year

Altmetric

Export

Actions (login required)

View Item View Item