Murray, Clifford, Jolie, Wouter, Fischer, Jeison A., Hall, Joshua, van Efferen, Camiel, Ehlen, Niels, Grueneis, Alexander, Busse, Carsten and Michely, Thomas (2019). Comprehensive tunneling spectroscopy of quasifreestanding MoS2 on graphene on Ir(111). Phys. Rev. B, 99 (11). COLLEGE PK: AMER PHYSICAL SOC. ISSN 2469-9969

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Abstract

We apply scanning tunneling spectroscopy to determine the band gaps of mono-, bi-, and trilayer MoS2 grown on a graphene single crystal on Ir(111). Besides the typical scanning tunneling spectroscopy at constant height, we employ two additional spectroscopic methods giving extra sensitivity and qualitative insight into the k vector of the tunneling electrons. Employing this comprehensive set of spectroscopic methods in tandem, we deduce a band gap of 2.53 +/- 0.08 eV for the monolayer. This is close to the predicted values for freestanding MoS2 and larger than is measured for MoS2 on other substrates. Through precise analysis of the comprehensive tunneling spectroscopy we also identify critical point energies in the mono- and bilayer MoS2 band structures. These compare well with their calculated freestanding equivalents, evidencing the graphene/Ir(111) substrate as an excellent environment upon which to study the many celebrated electronic phenomena of monolayer MoS2 and similar materials. Additionally, this investigation serves to expand the fledgling field of the comprehensive tunneling spectroscopy technique itself.

Item Type: Journal Article
Creators:
CreatorsEmailORCIDORCID Put Code
Murray, CliffordUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Jolie, WouterUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Fischer, Jeison A.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Hall, JoshuaUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
van Efferen, CamielUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Ehlen, NielsUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Grueneis, AlexanderUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Busse, CarstenUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Michely, ThomasUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
URN: urn:nbn:de:hbz:38-153373
DOI: 10.1103/PhysRevB.99.115434
Journal or Publication Title: Phys. Rev. B
Volume: 99
Number: 11
Date: 2019
Publisher: AMER PHYSICAL SOC
Place of Publication: COLLEGE PK
ISSN: 2469-9969
Language: English
Faculty: Unspecified
Divisions: Unspecified
Subjects: no entry
Uncontrolled Keywords:
KeywordsLanguage
SINGLE-LAYER MOS2; ELECTRONIC-STRUCTURE; GROWTH; STATES; GAPMultiple languages
Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed MatterMultiple languages
Refereed: Yes
URI: http://kups.ub.uni-koeln.de/id/eprint/15337

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