Universität zu Köln

Usachov, Dmitry Yu., Fedorov, Alexander V., Vilkov, Oleg Yu., Petukhov, Anatoly E. ORCID: 0000-0001-9362-3589, Rybkin, Artem G., Ernst, Arthur, Otrokov, Mikhail M., Chulkov, Evgueni V., Ogorodnikov, Ilya I., Kuznetsov, Mikhail V., Yashina, Lada V., Kataev, Elmar Yu., Erofeevskaya, Anna V., Voroshnin, Vladimir Yu., Adamchuk, Vera K., Laubschat, Clemens and Vyalikh, Denis V. (2016). Large-Scale Sublattice Asymmetry in Pure and Boron-Doped Graphene. Nano Lett., 16 (7). S. 4535 - 4544. WASHINGTON: AMER CHEMICAL SOC. ISSN 1530-6992

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Abstract

The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reproducible and processing compatible manner are very limited at the moment. A promising approach for the graphene band gap engineering is to introduce a large-scale sublattice asymmetry. Using photoelectron diffraction and spectroscopy we have demonstrated a selective incorporation of boron impurities into only one of the two graphene sublattices. We have shown that in the well-oriented graphene on the Co(0001) surface the carbon atoms occupy two nonequivalent positions with respect to the Co lattice, namely top and hollow sites. Boron impurities embedded into the graphene lattice preferably occupy the hollow sites due to a site-specific interaction with the Co pattern. Our theoretical calculations predict that such boron-doped graphene possesses a band gap that can be precisely controlled by the dopant concentration. B-graphene with doping asymmetry is, thus, a novel material, which is worth considering as a good candidate for electronic applications.

Item Type:	Journal Article
Creators:	Creators Email ORCID ORCID Put Code Usachov, Dmitry Yu. UNSPECIFIED UNSPECIFIED UNSPECIFIED Fedorov, Alexander V. UNSPECIFIED UNSPECIFIED UNSPECIFIED Vilkov, Oleg Yu. UNSPECIFIED UNSPECIFIED UNSPECIFIED Petukhov, Anatoly E. UNSPECIFIED orcid.org/0000-0001-9362-3589 UNSPECIFIED Rybkin, Artem G. UNSPECIFIED UNSPECIFIED UNSPECIFIED Ernst, Arthur UNSPECIFIED UNSPECIFIED UNSPECIFIED Otrokov, Mikhail M. UNSPECIFIED UNSPECIFIED UNSPECIFIED Chulkov, Evgueni V. UNSPECIFIED UNSPECIFIED UNSPECIFIED Ogorodnikov, Ilya I. UNSPECIFIED UNSPECIFIED UNSPECIFIED Kuznetsov, Mikhail V. UNSPECIFIED UNSPECIFIED UNSPECIFIED Yashina, Lada V. UNSPECIFIED UNSPECIFIED UNSPECIFIED Kataev, Elmar Yu. UNSPECIFIED UNSPECIFIED UNSPECIFIED Erofeevskaya, Anna V. UNSPECIFIED UNSPECIFIED UNSPECIFIED Voroshnin, Vladimir Yu. UNSPECIFIED UNSPECIFIED UNSPECIFIED Adamchuk, Vera K. UNSPECIFIED UNSPECIFIED UNSPECIFIED Laubschat, Clemens UNSPECIFIED UNSPECIFIED UNSPECIFIED Vyalikh, Denis V. UNSPECIFIED UNSPECIFIED UNSPECIFIED
URN:	urn:nbn:de:hbz:38-271671
DOI:	10.1021/acs.nanolett.6b01795
Journal or Publication Title:	Nano Lett.
Volume:	16
Number:	7
Page Range:	S. 4535 - 4544
Date:	2016
Publisher:	AMER CHEMICAL SOC
Place of Publication:	WASHINGTON
ISSN:	1530-6992
Language:	English
Faculty:	Unspecified
Divisions:	Unspecified
Subjects:	no entry
Uncontrolled Keywords:	Keywords Language FIELD-EFFECT TRANSISTORS; MONOLAYER GRAPHITE; TRANSPORT; SURFACE; APPROXIMATION; NITROGEN; NI(111); GROWTH; CARBON Multiple languages Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter Multiple languages
Refereed:	Yes
URI:	http://kups.ub.uni-koeln.de/id/eprint/27167