Universität zu Köln

Singh, Trilok ORCID: 0000-0003-2322-7403, Wang, Shuangzhou, Aslam, Nabeel, Zhang, Hehe, Hoffmann-Eifert, Susanne ORCID: 0000-0003-1682-826X and Mathur, Sanjay (2014). Atomic Layer Deposition of Transparent VOx Thin Films for Resistive Switching Applications. Chem. Vapor Depos., 20 (7-9). S. 291 - 298. WEINHEIM: WILEY-V C H VERLAG GMBH. ISSN 1521-3862

Full text not available from this repository.

Abstract

Atomic layer deposition (ALD) offers nearly pinhole-free, conformal, and with good thickness control, metal oxide nanometric thin films required for next-generation memory devices. Here we report on the ALD of VOx thin films grown at about 100 degrees C from a vanadium tri-isopropoxide (VTIP) precursor, with water as the co-reactant, followed by their post-growth treatments, for potential applications in resistive switching (RS) devices. As-grown VOx films are amorphous, and transform into polycrystalline layers upon annealing. Capacitor structures fabricated from amorphous VOx films show current-voltage (I-V) characteristics, interesting for RS applications. Depending on the electroforming conditions, bipolar-type memory switching with a resistance ratio R-OFF/R-ON>10(3) is obtained, as well as a combination of memory and threshold switching. The latter is attractive for its highly non-linear I-V characteristics, which is attributed to the temperature-induced insulator-to-metal transition (IMT) in vanadium dioxide.

Item Type:	Journal Article
Creators:	Creators Email ORCID ORCID Put Code Singh, Trilok UNSPECIFIED orcid.org/0000-0003-2322-7403 UNSPECIFIED Wang, Shuangzhou UNSPECIFIED UNSPECIFIED UNSPECIFIED Aslam, Nabeel UNSPECIFIED UNSPECIFIED UNSPECIFIED Zhang, Hehe UNSPECIFIED UNSPECIFIED UNSPECIFIED Hoffmann-Eifert, Susanne UNSPECIFIED orcid.org/0000-0003-1682-826X UNSPECIFIED Mathur, Sanjay UNSPECIFIED UNSPECIFIED UNSPECIFIED
URN:	urn:nbn:de:hbz:38-429982
DOI:	10.1002/cvde.201407122
Journal or Publication Title:	Chem. Vapor Depos.
Volume:	20
Number:	7-9
Page Range:	S. 291 - 298
Date:	2014
Publisher:	WILEY-V C H VERLAG GMBH
Place of Publication:	WEINHEIM
ISSN:	1521-3862
Language:	English
Faculty:	Faculty of Mathematics and Natural Sciences
Divisions:	Faculty of Mathematics and Natural Sciences > Department of Chemistry > Institute of Inorganic Chemistry
Subjects:	no entry
Uncontrolled Keywords:	Keywords Language VANADIUM-PENTOXIDE; OXIDE; TRANSITION; ALD Multiple languages Electrochemistry; Materials Science, Coatings & Films; Physics, Condensed Matter Multiple languages
Refereed:	Yes
URI:	http://kups.ub.uni-koeln.de/id/eprint/42998