Wang, Shuangzhou (2025). Atomic Layer Deposition of Vanadium Oxide and Tantalum Oxide Thin Films for Resistive Switching Applications - Abstract. Thesis Abstract, Universität zu Köln.

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Item Type: Thesis Abstract
Creators:
Creators
Email
ORCID
ORCID Put Code
Wang, Shuangzhou
UNSPECIFIED
UNSPECIFIED
UNSPECIFIED
URN: urn:nbn:de:hbz:38-753904
Date: 20 February 2025
Publisher: Verlag Dr. Hut
Place of Publication: München
ISBN: 978-3-8439-5593-5
Language: English
Faculty: Faculty of Mathematics and Natural Sciences
Divisions: Faculty of Mathematics and Natural Sciences > Department of Chemistry > Institute of Inorganic Chemistry
Subjects: Chemistry and allied sciences
Uncontrolled Keywords:
Keywords
Language
Atomic Layer Deposition
English
Vanadium Oxides
English
Tantalum Oxides
English
Resistive Switching
English
Date of oral exam: 7 November 2022
Referee:
Name
Academic Title
Wang, Shuangzhou
Prof. Dr. Dr.
Wickleder, Mathias
Prof. Dr.
Refereed: Yes
URI: http://kups.ub.uni-koeln.de/id/eprint/75390

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