Brune, Veronika, Hegemann, Corinna and Mathur, Sanjay ORCID: 0000-0003-2765-2693 (2019). Molecular Routes to Two-Dimensional Metal Dichalcogenides MX2 (M = Mo, W; X = S, Se). Inorg. Chem., 58 (15). S. 9922 - 9935. WASHINGTON: AMER CHEMICAL SOC. ISSN 1520-510X

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Abstract

New synthetic access to two-dimensional trapsition metal dichalcogenides (TMDCs) is highly desired to exploit their extraordinary semiconducting and optoelectronic properties for practical applications. We introduce here an entirely novel class of molecular precursors, [M-IV (XEtN(Me)- Etx)(2)] (M-IV= mo(IV),W-IV,X =S, Se), enabling chemical vapor deposition of TMDC thin films. Molybdenum and tungsten complexes of dianionic tridentate pincer-type ligands (HXEt)(2)NR (R = methyl, tert-butyl, phenyl) produced air-stable monomeric dichalcogenide complexes, [W(SEtN(Me)EtS)(2)] and [Mo(SEtN(Me)EtS)(2)], displaying W and Mo centers in an octahedral environment of 4 S and 2 N donor atoms. Owing to their remarkable volatility and clean thermal decomposition, both Mo and W complexes, when used in the chemical vapor deposition (CVD) process, produced crystalline MoS2 and WS2 thin films. X-ray diffraction analysis and atomic-scale imaging confirmed the phase purity and 2D structural characteristics of MoS2 and WS2 films. The new set of ligands presented in this work open ups convenient access to a scalable and precursor-based synthesis of 2D transition metal dichalcogenides.

Item Type: Journal Article
Creators:
CreatorsEmailORCIDORCID Put Code
Brune, VeronikaUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Hegemann, CorinnaUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Mathur, SanjayUNSPECIFIEDorcid.org/0000-0003-2765-2693UNSPECIFIED
URN: urn:nbn:de:hbz:38-144788
DOI: 10.1021/acs.inorgchem.9601084
Journal or Publication Title: Inorg. Chem.
Volume: 58
Number: 15
Page Range: S. 9922 - 9935
Date: 2019
Publisher: AMER CHEMICAL SOC
Place of Publication: WASHINGTON
ISSN: 1520-510X
Language: English
Faculty: Faculty of Mathematics and Natural Sciences
Divisions: Faculty of Mathematics and Natural Sciences > Department of Chemistry > Institute of Inorganic Chemistry
Subjects: no entry
Uncontrolled Keywords:
KeywordsLanguage
TUNGSTEN DISULFIDE NANOSHEETS; CHEMICAL-VAPOR-DEPOSITION; STABILIZED TIN(II) COMPOUNDS; SINGLE-SOURCE PRECURSOR; ANODE MATERIALS; OXORHENIUM(V) COMPLEXES; TRIPLE BOND; WAFER-SCALE; LAYER; MOLYBDENUMMultiple languages
Chemistry, Inorganic & NuclearMultiple languages
Refereed: Yes
URI: http://kups.ub.uni-koeln.de/id/eprint/14478

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