Universität zu Köln

Sasinska, Alexander, Leduc, Jennifer, Frank, Michael, Czympiel, Lisa, Fischer, Thomas, Christiansen, Silke H. and Mathur, Sanjay (2018). Competitive interplay of deposition and etching processes in atomic layer growth of cobalt and nickel metal films. J. Mater. Res., 33 (24). S. 4241 - 4251. NEW YORK: CAMBRIDGE UNIV PRESS. ISSN 2044-5326

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Abstract

Atomic layer deposition (ALD) of air stable cobalt and nickel complexes based on tridentate enaminones N,N-(4,4,4-trifluorobut-1-en-3-on)-dimethylethyldiamine (Htfb-dmeda) and N,N-(4,4,4-trifluorobut-1-en-3-on)-dimethylpropyldiamine (Htfb-dmpda) successfully produced metallic cobalt and nickel thin films. Detailed X-ray photoelectron spectroscopy (XPS) studies on the binding interaction of the first precursor monolayer with the surface functional groups elucidated the chemisorption behavior of the new precursor systems. A reactive remote hydrogen plasma was used as the co-reactant to activate the precursor decomposition yielding metal hydroxide intermediates. Subsequent hydrogen plasma etching of as-deposited films resulted in phase-pure metallic films through a recrystallization process, verified by surface and sub-surface XPS. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) analyses revealed pinhole-free films, with low surface roughness (0.2 +/- 0.06 nm root mean square, RMS) for both, cobalt and nickel thin films. Herein, the competitive role of hydrogen as etchant and reactant was demonstrated as prolonged plasma exposure time periods resulted in the formation of metal hydrides. This is mostly due to the catalytic dissociation of molecular hydrogen on transition metal surfaces, which already occurs upon low energy input.

Item Type:	Journal Article
Creators:	Creators Email ORCID ORCID Put Code Sasinska, Alexander UNSPECIFIED UNSPECIFIED UNSPECIFIED Leduc, Jennifer UNSPECIFIED UNSPECIFIED UNSPECIFIED Frank, Michael UNSPECIFIED UNSPECIFIED UNSPECIFIED Czympiel, Lisa UNSPECIFIED UNSPECIFIED UNSPECIFIED Fischer, Thomas UNSPECIFIED UNSPECIFIED UNSPECIFIED Christiansen, Silke H. UNSPECIFIED UNSPECIFIED UNSPECIFIED Mathur, Sanjay UNSPECIFIED UNSPECIFIED UNSPECIFIED
URN:	urn:nbn:de:hbz:38-161667
DOI:	10.1557/jmr.2018.379
Journal or Publication Title:	J. Mater. Res.
Volume:	33
Number:	24
Page Range:	S. 4241 - 4251
Date:	2018
Publisher:	CAMBRIDGE UNIV PRESS
Place of Publication:	NEW YORK
ISSN:	2044-5326
Language:	English
Faculty:	Faculty of Mathematics and Natural Sciences
Divisions:	Faculty of Mathematics and Natural Sciences > Department of Chemistry > Institute of Inorganic Chemistry
Subjects:	no entry
Uncontrolled Keywords:	Keywords Language CHEMICAL-VAPOR-DEPOSITION; PLASMA ALD METHOD; CO THIN-FILMS; LOW-TEMPERATURE; SURFACE-CHEMISTRY; PRECURSORS; COPPER; OXIDE; CVD; VOLATILE Multiple languages Materials Science, Multidisciplinary Multiple languages
Refereed:	Yes
URI:	http://kups.ub.uni-koeln.de/id/eprint/16166