Sasinska, Alexander, Ritschel, Daniel, Czympiel, Lisa and Mathur, Sanjay (2017). Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors. Adv. Eng. Mater., 19 (2). WEINHEIM: WILEY-V C H VERLAG GMBH. ISSN 1527-2648

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Abstract

The authors, report here on the deposition of metallic copper thin films by plasma-assisted atomic layer deposition (ALD) with an air stable and volatile precursor-[Cu((Py)CHCOCF3)(2)](2) (Py=pyridine)-that stands out due to its facile synthesis and easy handling under ambient conditions. Copper thin films are obtained by decomposing [Cu((Py)CHCOCF3)(2)](2) in hydrogen plasma in a concomitant deposition and recrystallization process. The thermal stability of the precursor prevents thermally induced decomposition, which allows precise control over thickness and film homogeneity. Electrical measurements of the as-deposited samples show clear interdependence of sheet resistance on the substrates surface roughness, thereby, films with higher roughness show higher resistance. Combined X-Ray photoelectron spectroscopy of Cu 2p peak and Cu LMM peak, as well as resistivity values of 58(-1) confirm the high quality of copper films without the need of further annealing steps under reducing atmosphere.

Item Type: Journal Article
Creators:
CreatorsEmailORCIDORCID Put Code
Sasinska, AlexanderUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Ritschel, DanielUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Czympiel, LisaUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Mathur, SanjayUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
URN: urn:nbn:de:hbz:38-240274
DOI: 10.1002/adem.201600593
Journal or Publication Title: Adv. Eng. Mater.
Volume: 19
Number: 2
Date: 2017
Publisher: WILEY-V C H VERLAG GMBH
Place of Publication: WEINHEIM
ISSN: 1527-2648
Language: English
Faculty: Faculty of Mathematics and Natural Sciences
Divisions: Faculty of Mathematics and Natural Sciences > Department of Chemistry > Institute of Inorganic Chemistry
Subjects: no entry
Uncontrolled Keywords:
KeywordsLanguage
RAY PHOTOELECTRON-SPECTROSCOPY; CHEMICAL-STATES; CU; SILICON; SURFACE; OXIDE; OXIDATION; XPS; RESISTIVITY; BEHAVIORMultiple languages
Materials Science, MultidisciplinaryMultiple languages
Refereed: Yes
URI: http://kups.ub.uni-koeln.de/id/eprint/24027

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