Universität zu Köln

Juergensen, Lasse, Hoell, David, Frank, Michael, Ludwig, Tim ORCID: 0000-0002-3633-805X, Graf, David, Schmidt-Verma, Anna Katrin, Raauf, Aida, Gessner, Isabel ORCID: 0000-0001-9674-161X and Mathur, Sanjay (2020). Controlled growth of Cu and CuOx thin films from subvalent copper precursors. Dalton Trans., 49 (38). S. 13317 - 13326. CAMBRIDGE: ROYAL SOC CHEMISTRY. ISSN 1477-9234

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Abstract

A new Cu(I) precursor, [(COD)Cu(TFB-TFEA)] (COD = 1,5-cyclooctadiene and TFB-TFEA = N-(4,4,4-triftuorobut-1-en-3-on)-6,6,6-trifluoroethylamine) with high volatility and a clean thermal decomposition pattern was tested for thermal and plasma-assisted chemical vapor deposition (CVD). The heteroleptic configuration based on an anionic and a chelating neutral ligand unified both reactivity and sufficient stability resulting in an intrinsic molecular control over the composition of the resulting CVD deposits. The electronic influence of the ligand on the metal site was studied by 1D and 2D NMR spectroscopy, while El mass spectrometry revealed the ligand elimination cascade. Thermal and plasma CVD experiments demonstrated the suitability of the copper compound for an atom-efficient (high molecule-to-material yield) deposition of copper(0) and copper(I) oxide films that could be converted into crystalline copper(s) oxide upon heat treatment at 500 degrees C.

Item Type:	Journal Article
Creators:	Creators Email ORCID ORCID Put Code Juergensen, Lasse UNSPECIFIED UNSPECIFIED UNSPECIFIED Hoell, David UNSPECIFIED UNSPECIFIED UNSPECIFIED Frank, Michael UNSPECIFIED UNSPECIFIED UNSPECIFIED Ludwig, Tim UNSPECIFIED orcid.org/0000-0002-3633-805X UNSPECIFIED Graf, David UNSPECIFIED UNSPECIFIED UNSPECIFIED Schmidt-Verma, Anna Katrin UNSPECIFIED UNSPECIFIED UNSPECIFIED Raauf, Aida UNSPECIFIED UNSPECIFIED UNSPECIFIED Gessner, Isabel UNSPECIFIED orcid.org/0000-0001-9674-161X UNSPECIFIED Mathur, Sanjay UNSPECIFIED UNSPECIFIED UNSPECIFIED
URN:	urn:nbn:de:hbz:38-315097
DOI:	10.1039/d0dt02570d
Journal or Publication Title:	Dalton Trans.
Volume:	49
Number:	38
Page Range:	S. 13317 - 13326
Date:	2020
Publisher:	ROYAL SOC CHEMISTRY
Place of Publication:	CAMBRIDGE
ISSN:	1477-9234
Language:	English
Faculty:	Faculty of Mathematics and Natural Sciences
Divisions:	Faculty of Mathematics and Natural Sciences > Department of Chemistry > Institute of Inorganic Chemistry
Subjects:	no entry
Uncontrolled Keywords:	Keywords Language ATOMIC LAYER DEPOSITION; CHEMICAL-VAPOR-DEPOSITION; CU(I); METALLIZATION; OXIDES Multiple languages Chemistry, Inorganic & Nuclear Multiple languages
Refereed:	Yes
URI:	http://kups.ub.uni-koeln.de/id/eprint/31509