Universität zu Köln

Verbitskiy, N. I., Fedorov, A. V., Profeta, G., Stroppa, A., Petaccia, L., Senkovskiy, B., Nefedov, A., Woell, C., Usachov, D. Yu., Vyalikh, D. V., Yashina, L. V., Eliseev, A. A., Pichler, T. and Grueneis, A. (2015). Atomically precise semiconductor-graphene and hBN interfaces by Ge intercalation. Sci Rep, 5. LONDON: NATURE PUBLISHING GROUP. ISSN 2045-2322

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Abstract

The full exploration of the potential, which graphene offers to nanoelectronics requires its integration into semiconductor technology. So far the real-world applications are limited by the ability to concomitantly achieve large single-crystalline domains on dielectrics and semiconductors and to tailor the interfaces between them. Here we show a new direct bottom-up method for the fabrication of high-quality atomically precise interfaces between 2D materials, like graphene and hexagonal boron nitride (hBN), and classical semiconductor via Ge intercalation. Using angle-resolved photoemission spectroscopy and complementary DFT modelling we observed for the first time that epitaxially grown graphene with the Ge monolayer underneath demonstrates Dirac Fermions unaffected by the substrate as well as an unperturbed electronic band structure of hBN. This approach provides the intrinsic relativistic 2D electron gas towards integration in semiconductor technology. Hence, these new interfaces are a promising path for the integration of graphene and hBN into state-of-the-art semiconductor technology.

Item Type:	Journal Article
Creators:	Creators Email ORCID ORCID Put Code Verbitskiy, N. I. UNSPECIFIED UNSPECIFIED UNSPECIFIED Fedorov, A. V. UNSPECIFIED UNSPECIFIED UNSPECIFIED Profeta, G. UNSPECIFIED UNSPECIFIED UNSPECIFIED Stroppa, A. UNSPECIFIED UNSPECIFIED UNSPECIFIED Petaccia, L. UNSPECIFIED UNSPECIFIED UNSPECIFIED Senkovskiy, B. UNSPECIFIED UNSPECIFIED UNSPECIFIED Nefedov, A. UNSPECIFIED UNSPECIFIED UNSPECIFIED Woell, C. UNSPECIFIED UNSPECIFIED UNSPECIFIED Usachov, D. Yu. UNSPECIFIED UNSPECIFIED UNSPECIFIED Vyalikh, D. V. UNSPECIFIED UNSPECIFIED UNSPECIFIED Yashina, L. V. UNSPECIFIED UNSPECIFIED UNSPECIFIED Eliseev, A. A. UNSPECIFIED UNSPECIFIED UNSPECIFIED Pichler, T. UNSPECIFIED UNSPECIFIED UNSPECIFIED Grueneis, A. UNSPECIFIED UNSPECIFIED UNSPECIFIED
URN:	urn:nbn:de:hbz:38-383899
DOI:	10.1038/srep17700
Journal or Publication Title:	Sci Rep
Volume:	5
Date:	2015
Publisher:	NATURE PUBLISHING GROUP
Place of Publication:	LONDON
ISSN:	2045-2322
Language:	English
Faculty:	Unspecified
Divisions:	Unspecified
Subjects:	no entry
Uncontrolled Keywords:	Keywords Language TOTAL-ENERGY CALCULATIONS; EPITAXIAL GRAPHENE; MONOLAYER GRAPHITE; HIGH-QUALITY; SURFACE; GROWTH; OXYGEN; TRANSITION; BEAMLINE; CU(111) Multiple languages Multidisciplinary Sciences Multiple languages
URI:	http://kups.ub.uni-koeln.de/id/eprint/38389