Universität zu Köln

Struzzi, C., Verbitskiy, N. I., Fedorov, A. V., Nefedov, A., Frank, O., Kalbac, M., Di Santo, G., Panighel, M., Goldoni, A., Gartner, J., Weber, W., Weinl, M., Schreck, M., Woll, Ch., Sachdev, H., Gruneis, A. and Petaccia, L. (2015). High-quality graphene on single crystal Ir(111) films on Si(111) wafers: Synthesis and multi-spectroscopic characterization. Carbon, 81. S. 167 - 174. OXFORD: PERGAMON-ELSEVIER SCIENCE LTD. ISSN 1873-3891

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Abstract

The characterization of graphene by electron and optical spectroscopy is well established and has led to numerous breakthroughs in material science. Yet, it is interesting to note that these characterization methods are almost never carried out on the same sample, i.e., electron spectroscopy uses epitaxial graphene while optical spectroscopy relies on cleaved graphene flakes. In order to bring coherence and convergence to this branch, a universal and easy-to-prepare substrate is needed. Here we suggest that chemical vapour deposition (CVD) grown graphene on thin monocrystalline Ir(111) films, which are grown heteroepitaxially on Si(111) wafers with an yttria stabilized zirconia (YSZ) buffer layer, perfectly meets these needs. We investigate graphene prepared in this way by low-energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS), near edge X-ray absorption fine structure (NEXAFS) spectroscopy, angle-resolved photoemission spectroscopy (ARPES), resonance Raman spectroscopy, and scanning tunnelling microscopy (STM). Our results highlight the excellent crystalline quality of graphene, comparable to graphene prepared on Ir(111) bulk single crystals. This synthesis route allows for large-area, inexpensive

Item Type:	Journal Article
Creators:	Creators Email ORCID ORCID Put Code Struzzi, C. UNSPECIFIED UNSPECIFIED UNSPECIFIED Verbitskiy, N. I. UNSPECIFIED UNSPECIFIED UNSPECIFIED Fedorov, A. V. UNSPECIFIED UNSPECIFIED UNSPECIFIED Nefedov, A. UNSPECIFIED UNSPECIFIED UNSPECIFIED Frank, O. UNSPECIFIED UNSPECIFIED UNSPECIFIED Kalbac, M. UNSPECIFIED UNSPECIFIED UNSPECIFIED Di Santo, G. UNSPECIFIED UNSPECIFIED UNSPECIFIED Panighel, M. UNSPECIFIED UNSPECIFIED UNSPECIFIED Goldoni, A. UNSPECIFIED UNSPECIFIED UNSPECIFIED Gartner, J. UNSPECIFIED UNSPECIFIED UNSPECIFIED Weber, W. UNSPECIFIED UNSPECIFIED UNSPECIFIED Weinl, M. UNSPECIFIED UNSPECIFIED UNSPECIFIED Schreck, M. UNSPECIFIED UNSPECIFIED UNSPECIFIED Woll, Ch. UNSPECIFIED UNSPECIFIED UNSPECIFIED Sachdev, H. UNSPECIFIED UNSPECIFIED UNSPECIFIED Gruneis, A. UNSPECIFIED UNSPECIFIED UNSPECIFIED Petaccia, L. UNSPECIFIED UNSPECIFIED UNSPECIFIED
URN:	urn:nbn:de:hbz:38-418463
DOI:	10.1016/j.carbon.2014.09.045
Journal or Publication Title:	Carbon
Volume:	81
Page Range:	S. 167 - 174
Date:	2015
Publisher:	PERGAMON-ELSEVIER SCIENCE LTD
Place of Publication:	OXFORD
ISSN:	1873-3891
Language:	English
Faculty:	Unspecified
Divisions:	Unspecified
Subjects:	no entry
Uncontrolled Keywords:	Keywords Language CHEMICAL-VAPOR-DEPOSITION; RAMAN-SPECTROSCOPY; FREESTANDING GRAPHENE; EPITAXIAL GRAPHENE; STRAIN; GRAPHITE; GROWTH; ELECTRODES; SUBSTRATE; RU(0001) Multiple languages Chemistry, Physical; Materials Science, Multidisciplinary Multiple languages
URI:	http://kups.ub.uni-koeln.de/id/eprint/41846