Universität zu Köln

Raauf, Aida ORCID: 0000-0001-7222-5266, Leduc, Jennifer, Frank, Michael, Stadler, Daniel ORCID: 0000-0003-3233-9167, Graf, David, Wilhelm, Michael ORCID: 0000-0002-4764-6955, Grosch, Matthias and Mathur, Sanjay (2021). Magnetic Field-Assisted Chemical Vapor Deposition of UO2 Thin Films. Inorg. Chem., 60 (3). S. 1915 - 1922. WASHINGTON: AMER CHEMICAL SOC. ISSN 1520-510X

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Abstract

Chemical vapor deposition (CVD) of UO2 thin films from in situ reductive decomposition using a U(VI) precursor ([U((OBu)-Bu-t)(6)]) was performed under applied magnetic fields (up to 1 T). The molecular mechanism responsible for the formation of U(IV) oxide was determined by nuclear magnetic resonance (NMR) analysis of gaseous byproducts revealed a reductive transformation of uranium hexakis-tert-butoxide into urania. Thin films were grown under zero-field and applied magnetic field conditions that clearly showed the guiding influence of the magnetic field on altering the morphology and crystallographic orientation of grains in UO2 deposits produced under an external magnetic field. Application of magnetic fields was found to reduce the grain size. Whereas films with a < 111 > preferred orientation were observed under zero-field conditions, the application of magnetic fields (500 mT to 1 T) promoted a polycrystalline growth. X-ray photoelectron spectroscopy confirmed the formation of UO2 films with traces of U(VI) centers present on the surface, which was evidently due to the surface oxidation of coordinatively unsaturated U(IV) centers, which was found to be significantly reduced in the field-assisted process. These findings emphasize the positive effect of magnetic fields on controlling the texture and chemical homogeneity of CVD-grown films. The availability of a magnetic field as an extrinsic parameter for the CVD process adds to the conventional parameters, such as temperature, deposition time, and pressure, and expands the experimental space for thin-film growth.

Item Type:	Journal Article
Creators:	Creators Email ORCID ORCID Put Code Raauf, Aida UNSPECIFIED orcid.org/0000-0001-7222-5266 UNSPECIFIED Leduc, Jennifer UNSPECIFIED UNSPECIFIED UNSPECIFIED Frank, Michael UNSPECIFIED UNSPECIFIED UNSPECIFIED Stadler, Daniel UNSPECIFIED orcid.org/0000-0003-3233-9167 UNSPECIFIED Graf, David UNSPECIFIED UNSPECIFIED UNSPECIFIED Wilhelm, Michael UNSPECIFIED orcid.org/0000-0002-4764-6955 UNSPECIFIED Grosch, Matthias UNSPECIFIED UNSPECIFIED UNSPECIFIED Mathur, Sanjay UNSPECIFIED UNSPECIFIED UNSPECIFIED
URN:	urn:nbn:de:hbz:38-561748
DOI:	10.1021/acs.inorgchem.0c03387
Journal or Publication Title:	Inorg. Chem.
Volume:	60
Number:	3
Page Range:	S. 1915 - 1922
Date:	2021
Publisher:	AMER CHEMICAL SOC
Place of Publication:	WASHINGTON
ISSN:	1520-510X
Language:	English
Faculty:	Unspecified
Divisions:	Unspecified
Subjects:	no entry
Uncontrolled Keywords:	Keywords Language Chemistry, Inorganic & Nuclear Multiple languages
URI:	http://kups.ub.uni-koeln.de/id/eprint/56174