Universität zu Köln

Weis, H., Holland-Moritz, D., Kargl, F., Yang, F., Unruh, T., Hansen, T. C., Bednarcik, J. and Meyer, A. (2021). Short-range order and atomic diffusion in liquid Ge and Si20Ge80 investigated by neutron scattering and x-ray diffraction. Phys. Rev. B, 104 (13). COLLEGE PK: AMER PHYSICAL SOC. ISSN 2469-9969

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Abstract

We studied structure and dynamics in liquid Ge and Si20Ge80. Quasielastic neutron scattering (QNS) was employed to accurately determine the Ge self-diffusion coefficient. Static structure factors were measured using neutron and x-ray diffraction. Containerless processing via electromagnetic levitation (EML) enabled to obtain structure factors over a broad temperature range from the metastable regime of the undercooled melt to several hundred Kelvin above the melting point. Moreover, isotopic substitution and combination with x-ray diffraction allowed to determine the partial structure factors SNN(q), SNC(q), SGeGe(q), and SGeSi(q) for liquid Si20Ge80. The topological structures of liquid Ge and Si20Ge80 are very similar. In addition, the Ge self-diffusion coefficients in liquid Ge and Si20Ge80 are equal within error limits.

Item Type:	Journal Article
Creators:	Creators Email ORCID ORCID Put Code Weis, H. UNSPECIFIED UNSPECIFIED UNSPECIFIED Holland-Moritz, D. UNSPECIFIED UNSPECIFIED UNSPECIFIED Kargl, F. UNSPECIFIED UNSPECIFIED UNSPECIFIED Yang, F. UNSPECIFIED UNSPECIFIED UNSPECIFIED Unruh, T. UNSPECIFIED UNSPECIFIED UNSPECIFIED Hansen, T. C. UNSPECIFIED UNSPECIFIED UNSPECIFIED Bednarcik, J. UNSPECIFIED UNSPECIFIED UNSPECIFIED Meyer, A. UNSPECIFIED UNSPECIFIED UNSPECIFIED
URN:	urn:nbn:de:hbz:38-597193
DOI:	10.1103/PhysRevB.104.134108
Journal or Publication Title:	Phys. Rev. B
Volume:	104
Number:	13
Date:	2021
Publisher:	AMER PHYSICAL SOC
Place of Publication:	COLLEGE PK
ISSN:	2469-9969
Language:	English
Faculty:	Unspecified
Divisions:	Unspecified
Subjects:	no entry
Uncontrolled Keywords:	Keywords Language INITIO MOLECULAR-DYNAMICS; ELECTRICAL-RESISTIVITY; ELECTRONIC-PROPERTIES; SELF-DIFFUSION; GERMANIUM; SIGE; SIMULATIONS; SILICON; MELTS Multiple languages Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter Multiple languages
URI:	http://kups.ub.uni-koeln.de/id/eprint/59719