Energy Scales of Compositional Disorder in Alloy Semiconductors

Baranovskii, Sergei D., V. Nenashev, Alexey, Hertel, Dirk, Gebhard, Florian and Meerholz, Klaus . Energy Scales of Compositional Disorder in Alloy Semiconductors. ACS Omega. WASHINGTON: AMER CHEMICAL SOC. ISSN 2470-1343

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DOI:10.1021/acsomega.2c05426

Abstract

The study of semiconductor alloys is currently experiencing a renaissance. Alloying is often used to tune the material properties desired for device applications. It allows, for instance, to vary in broad ranges the band gaps responsible for the light absorption and light emission spectra of the materials. The price for this tunability is the extra disorder caused by alloying. In this mini review, we address the features of the unavoidable disorder caused by statistical fluctuations of the alloy composition along the device. Combinations of material parameters responsible for the alloy disorder are revealed, based solely on the physical dimensions of the input parameters. Theoretical estimates for the energy scales of the disorder landscape are given separately for several kinds of alloys desired for applications in modern optoelectronics. Among these are perovskites, transition-metal dichalcogenide monolayers, and organic semiconductor blends. While theoretical estimates for perovskites and inorganic monolayers are compatible with experimental data, such a comparison is rather controversial for organic blends, indicating that more research is needed in the latter case.

Item Type:

Journal Article

Creators:

Creators	Email	ORCID	ORCID Put Code
Baranovskii, Sergei D.	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
V. Nenashev, Alexey	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Hertel, Dirk	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Gebhard, Florian	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Meerholz, Klaus	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED