Universität zu Köln

Wang, Shuangzhou (2025). Atomic Layer Deposition of Vanadium Oxide and Tantalum Oxide Thin Films for Resistive Switching Applications - Abstract. Thesis Abstract, Universität zu Köln.

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Item Type:	Thesis Abstract
Creators:	Creators Email ORCID ORCID Put Code Wang, Shuangzhou UNSPECIFIED UNSPECIFIED UNSPECIFIED
URN:	urn:nbn:de:hbz:38-753904
Date:	20 February 2025
Publisher:	Verlag Dr. Hut
Place of Publication:	München
ISBN:	978-3-8439-5593-5
Language:	English
Faculty:	Faculty of Mathematics and Natural Sciences
Divisions:	Faculty of Mathematics and Natural Sciences > Department of Chemistry > Institute of Inorganic Chemistry
Subjects:	Chemistry and allied sciences
Uncontrolled Keywords:	Keywords Language Atomic Layer Deposition English Vanadium Oxides English Tantalum Oxides English Resistive Switching English
Date of oral exam:	7 November 2022
Referee:	Name Academic Title Wang, Shuangzhou Prof. Dr. Dr. Wickleder, Mathias Prof. Dr.
Refereed:	Yes
URI:	http://kups.ub.uni-koeln.de/id/eprint/75390