Universität zu Köln

Lu, Hongyi, Xie, Shiyu, Zhang, Weijian ORCID: 0009-0001-9192-9143, Chen, Yue ORCID: 0000-0002-0463-4209, Tao, Jianming, Mhaskar, Chinmayee Mandar ORCID: 0000-0002-3237-9612, Roy Chaudhuri, Ayan ORCID: 0000-0002-9108-3918, Lin, Yingbin ORCID: 0000-0003-1793-5649, Li, Jiaxin, Mathur, Sanjay ORCID: 0000-0003-2765-2693 and Huang, Zhigao ORCID: 0000-0002-3836-6986 (2025). Negative differential resistance in memristive systems: historical evolution, mechanisms and neuromorphic applications of niobium oxide devices. Nanoscale, 17 (36). pp. 20606-20642. Royal Society of Chemistry. ISSN 2040-3364

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Abstract

The synergy between the memristive effect and negative differential resistance (NDR) offers promising prospects for advancing electronic devices and circuits. Predictable outcomes include the development of devices with improved performance and functionality that are applicable across a wide range of fields, from computing architecture to neuromorphic engineering. Despite the growing body of literature exploring this convergence, the effective implementation of the NDR effect in memristors faces many challenges. Several memristive materials—including VO 2 , TaO x , and chalcogenides—have demonstrated promising NDR effects. Among them, niobium oxide uniquely combines steep (<3 ns), endurable (>10 12 cycles) negative differential resistance with biophysically plausible spiking dynamics—enabled by its dual current-controlled and thermally driven mechanisms—making it ideal for energy-efficient neuromorphic primitives. This paper reviews the complex phenomenon of NDR and its applications in niobium oxide memristors while analyzing its potential future applications in electronic systems. By outlining the NDR effect and its applications in niobium oxide memristors, this paper aims to provide valuable insights for researchers in the field.

Item Type:	Article
Creators:	Creators Email ORCID ORCID Put Code Lu, Hongyi UNSPECIFIED UNSPECIFIED UNSPECIFIED Xie, Shiyu UNSPECIFIED UNSPECIFIED UNSPECIFIED Zhang, Weijian UNSPECIFIED https://orcid.org/0009-0001-9192-9143 UNSPECIFIED Chen, Yue UNSPECIFIED https://orcid.org/0000-0002-0463-4209 UNSPECIFIED Tao, Jianming UNSPECIFIED UNSPECIFIED UNSPECIFIED Mhaskar, Chinmayee Mandar UNSPECIFIED https://orcid.org/0000-0002-3237-9612 UNSPECIFIED Roy Chaudhuri, Ayan UNSPECIFIED https://orcid.org/0000-0002-9108-3918 UNSPECIFIED Lin, Yingbin UNSPECIFIED https://orcid.org/0000-0003-1793-5649 UNSPECIFIED Li, Jiaxin UNSPECIFIED UNSPECIFIED UNSPECIFIED Mathur, Sanjay UNSPECIFIED https://orcid.org/0000-0003-2765-2693 UNSPECIFIED Huang, Zhigao UNSPECIFIED https://orcid.org/0000-0002-3836-6986 UNSPECIFIED
URN:	urn:nbn:de:hbz:38-811594
Identification Number:	10.1039/D5NR02491A
Journal or Publication Title:	Nanoscale
Volume:	17
Number:	36
Page Range:	pp. 20606-20642
Number of Pages:	37
Date:	28 September 2025
Publisher:	Royal Society of Chemistry
ISSN:	2040-3364
Language:	English
Faculty:	Faculty of Mathematics and Natural Sciences
Divisions:	Faculty of Mathematics and Natural Sciences > Department of Chemistry > Institute of Inorganic Chemistry
Subjects:	Chemistry and allied sciences Life sciences
['eprint_fieldname_oa_funders' not defined]:	Publikationsfonds UzK
Refereed:	Yes
URI:	http://kups.ub.uni-koeln.de/id/eprint/81159