Choi, Minho, Choi, Heechae ORCID: 0000-0002-9390-6607, Ahn, Jinho and Kim, Yong Tae (2019). Material design for Ge2Sb2Te5 phase-change material with thermal stability and lattice distortion. Scr. Mater., 170. S. 16 - 20. OXFORD: PERGAMON-ELSEVIER SCIENCE LTD. ISSN 1359-6462

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Abstract

To overcome the reliability issue of phase-change memory, the development of stable phase-change materials is extremely important. In this study, we analyze 13 dopants for Ge2Sb2Te5 (GST) based on two criteria: i) the change in thermal stability by doping and ii) a lattice distortion. After doping the elements, 11 elements showed a negative doping formation energy compared with pure GST. The angular distortion of the Zn dopant is the largest. The hole carrier decreases, and the electrical resistance increases through Zn-doping in GST. The increased resistance of the material can lead to low power consumption with a high energy effectiveness. (C) 2019 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Item Type: Journal Article
Creators:
CreatorsEmailORCIDORCID Put Code
Choi, MinhoUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Choi, HeechaeUNSPECIFIEDorcid.org/0000-0002-9390-6607UNSPECIFIED
Ahn, JinhoUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Kim, Yong TaeUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
URN: urn:nbn:de:hbz:38-143700
DOI: 10.1016/j.scriptamat.2019.05.024
Journal or Publication Title: Scr. Mater.
Volume: 170
Page Range: S. 16 - 20
Date: 2019
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Place of Publication: OXFORD
ISSN: 1359-6462
Language: English
Faculty: Unspecified
Divisions: Unspecified
Subjects: no entry
Uncontrolled Keywords:
KeywordsLanguage
GENERALIZED GRADIENT APPROXIMATION; DOPED GE2SB2TE5; ELECTRICAL-PROPERTIES; FILMSMultiple languages
Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Metallurgy & Metallurgical EngineeringMultiple languages
Refereed: Yes
URI: http://kups.ub.uni-koeln.de/id/eprint/14370

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