Universität zu Köln

Choi, Minho, Choi, Heechae ORCID: 0000-0002-9390-6607, Ahn, Jinho and Kim, Yong Tae (2019). Material design for Ge2Sb2Te5 phase-change material with thermal stability and lattice distortion. Scr. Mater., 170. S. 16 - 20. OXFORD: PERGAMON-ELSEVIER SCIENCE LTD. ISSN 1359-6462

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Abstract

To overcome the reliability issue of phase-change memory, the development of stable phase-change materials is extremely important. In this study, we analyze 13 dopants for Ge2Sb2Te5 (GST) based on two criteria: i) the change in thermal stability by doping and ii) a lattice distortion. After doping the elements, 11 elements showed a negative doping formation energy compared with pure GST. The angular distortion of the Zn dopant is the largest. The hole carrier decreases, and the electrical resistance increases through Zn-doping in GST. The increased resistance of the material can lead to low power consumption with a high energy effectiveness. (C) 2019 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Item Type:	Journal Article
Creators:	Creators Email ORCID ORCID Put Code Choi, Minho UNSPECIFIED UNSPECIFIED UNSPECIFIED Choi, Heechae UNSPECIFIED orcid.org/0000-0002-9390-6607 UNSPECIFIED Ahn, Jinho UNSPECIFIED UNSPECIFIED UNSPECIFIED Kim, Yong Tae UNSPECIFIED UNSPECIFIED UNSPECIFIED
URN:	urn:nbn:de:hbz:38-143700
DOI:	10.1016/j.scriptamat.2019.05.024
Journal or Publication Title:	Scr. Mater.
Volume:	170
Page Range:	S. 16 - 20
Date:	2019
Publisher:	PERGAMON-ELSEVIER SCIENCE LTD
Place of Publication:	OXFORD
ISSN:	1359-6462
Language:	English
Faculty:	Unspecified
Divisions:	Unspecified
Subjects:	no entry
Uncontrolled Keywords:	Keywords Language GENERALIZED GRADIENT APPROXIMATION; DOPED GE2SB2TE5; ELECTRICAL-PROPERTIES; FILMS Multiple languages Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering Multiple languages
Refereed:	Yes
URI:	http://kups.ub.uni-koeln.de/id/eprint/14370