Universität zu Köln

Sotthewes, Kai, van Bremen, Rik, Dollekamp, Edwin, Boulogne, Tim, Nowakowski, Krystian ORCID: 0000-0002-4598-9831, Kas, Daan, Zandvliet, Harold J. W. and Bampoulis, Pantelis ORCID: 0000-0002-2347-5223 (2019). Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides. J. Phys. Chem. C, 123 (9). S. 5411 - 5421. WASHINGTON: AMER CHEMICAL SOC. ISSN 1932-7455

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Abstract

Understanding the electron transport through transition-metal dichalcogenide (TMDC)-based semiconductor/metal junctions is vital for the realization of future TMDC-based (opto-)electronic devices. Despite the bonding in TMDCs being largely constrained within the layers, strong Fermi-level pinning (FLP) was observed in TMDC-based devices, reducing the tunability of the Schottky barrier height. We present evidence that metal-induced gap states (MIGS) are the origin for the large FLP similar to conventional semiconductors. A variety of TMDCs (MoSe2, WSe2, WS2, and MoTe2) were investigated using high-spatial-resolution surface characterization techniques, permitting us to distinguish between defected and pristine regions. The Schottky barrier heights on the pristine regions can be explained by MIGS, inducing partial FLP. The FLP strength is further enhanced by disorder-induced gap states induced by transition-metal vacancies or substitutionals at the defected regions. Our findings emphasize the importance of defects on the electron transport properties in TMDC-based devices and confirm the origin of FLP in TMDC-based metal/semiconductor junctions.

Item Type:	Journal Article
Creators:	Creators Email ORCID ORCID Put Code Sotthewes, Kai UNSPECIFIED UNSPECIFIED UNSPECIFIED van Bremen, Rik UNSPECIFIED UNSPECIFIED UNSPECIFIED Dollekamp, Edwin UNSPECIFIED UNSPECIFIED UNSPECIFIED Boulogne, Tim UNSPECIFIED UNSPECIFIED UNSPECIFIED Nowakowski, Krystian UNSPECIFIED orcid.org/0000-0002-4598-9831 UNSPECIFIED Kas, Daan UNSPECIFIED UNSPECIFIED UNSPECIFIED Zandvliet, Harold J. W. UNSPECIFIED UNSPECIFIED UNSPECIFIED Bampoulis, Pantelis UNSPECIFIED orcid.org/0000-0002-2347-5223 UNSPECIFIED
URN:	urn:nbn:de:hbz:38-154105
DOI:	10.1021/acs.jpcc.8b10971
Journal or Publication Title:	J. Phys. Chem. C
Volume:	123
Number:	9
Page Range:	S. 5411 - 5421
Date:	2019
Publisher:	AMER CHEMICAL SOC
Place of Publication:	WASHINGTON
ISSN:	1932-7455
Language:	English
Faculty:	Unspecified
Divisions:	Unspecified
Subjects:	no entry
Uncontrolled Keywords:	Keywords Language SCHOTTKY-BARRIER FORMATION; MOS2 TRANSISTORS; SEMICONDUCTOR; DEFECTS; CONTACTS; NANOSCALE; IMAGES; AG Multiple languages Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary Multiple languages
Refereed:	Yes
URI:	http://kups.ub.uni-koeln.de/id/eprint/15410