zum Hagen, Ferdinand H. Farwick, Zimmermann, Domenik M., Silva, Caio C., Schlueter, Christoph, Atodiresei, Nicolae ORCID: 0000-0002-8203-1227, Jolie, Wouter, Martinez-Galera, Antonio J., Dombrowski, Daniela, Schroder, Ulrike A., Will, Moritz, Lazic, Predrag, Caciuc, Vasile, Blugel, Stefan ORCID: 0000-0001-9987-4733, Lee, Tien-Lin, Michely, Thomas and Busse, Carsten ORCID: 0000-0001-5522-0578 (2016). Structure and Growth of Hexagonal Boron Nitride on Ir(111). ACS Nano, 10 (12). S. 11012 - 11027. WASHINGTON: AMER CHEMICAL SOC. ISSN 1936-086X

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Abstract

Using the X-ray standing wave method, scanning tunneling microscopy, low energy electron diffraction, and density functional theory, we precisely determine the lateral and vertical structure of hexagonal boron nitride on Ir(111). The moire superstructure leads to a periodic arrangement of strongly chemisorbed valleys in an otherwise rather flat, weakly physisorbed plane. The best commensurate approximation of the moire unit cell is (12 X 12) boron nitride cells resting on (11 X 11) substrate cells, which is at variance with several earlier studies. We uncover the existence of two fundamentally different mechanisms of layer formation for hexagonal boron nitride, namely, nucleation and growth as opposed to network formation without nucleation. The different pathways are linked to different distributions of rotational domains, and the latter enables selection of a single orientation only.

Item Type: Journal Article
Creators:
CreatorsEmailORCIDORCID Put Code
zum Hagen, Ferdinand H. FarwickUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Zimmermann, Domenik M.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Silva, Caio C.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Schlueter, ChristophUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Atodiresei, NicolaeUNSPECIFIEDorcid.org/0000-0002-8203-1227UNSPECIFIED
Jolie, WouterUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Martinez-Galera, Antonio J.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Dombrowski, DanielaUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Schroder, Ulrike A.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Will, MoritzUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Lazic, PredragUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Caciuc, VasileUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Blugel, StefanUNSPECIFIEDorcid.org/0000-0001-9987-4733UNSPECIFIED
Lee, Tien-LinUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Michely, ThomasUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Busse, CarstenUNSPECIFIEDorcid.org/0000-0001-5522-0578UNSPECIFIED
URN: urn:nbn:de:hbz:38-253798
DOI: 10.1021/acsnano.6b05819
Journal or Publication Title: ACS Nano
Volume: 10
Number: 12
Page Range: S. 11012 - 11027
Date: 2016
Publisher: AMER CHEMICAL SOC
Place of Publication: WASHINGTON
ISSN: 1936-086X
Language: English
Faculty: Unspecified
Divisions: Unspecified
Subjects: no entry
Uncontrolled Keywords:
KeywordsLanguage
ANISOTROPIC THERMAL-EXPANSION; EPITAXIAL-GROWTH; H-BN; GRAPHENE; LAYER; CU(111)Multiple languages
Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, MultidisciplinaryMultiple languages
Refereed: Yes
URI: http://kups.ub.uni-koeln.de/id/eprint/25379

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