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Verbitskiy, N. I., Fedorov, A. V., Profeta, G., Stroppa, A., Petaccia, L., Senkovskiy, B., Nefedov, A., Woell, C., Usachov, D. Yu., Vyalikh, D. V., Yashina, L. V., Eliseev, A. A., Pichler, T. and Grueneis, A. (2015). Atomically precise semiconductor-graphene and hBN interfaces by Ge intercalation. Sci Rep, 5. LONDON: NATURE PUBLISHING GROUP. ISSN 2045-2322