Universität zu Köln

Tayari, V., Senkovskiy, B. V., Rybkovskiy, D., Ehlen, N., Fedorov, A., Chen, C. -Y., Avila, J., Asensio, M., Perucchi, A., di Pietro, P., Yashina, L., Fakih, I., Hemsworth, N., Petrescu, M., Gervais, G., Grueneis, A. and Szkopek, T. (2018). Quasi-two-dimensional thermoelectricity in SnSe. Phys. Rev. B, 97 (4). COLLEGE PK: AMER PHYSICAL SOC. ISSN 2469-9969

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Abstract

Stannous selenide is a layered semiconductor that is a polar analog of black phosphorus and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle-resolved photoemission spectroscopy, optical reflection spectroscopy, and magnetotransport measurements reveal a multiple-valley valence-band structure and a quasi-two-dimensional dispersion, realizing a Hicks-Dresselhaus thermoelectric contributing to the high Seebeck coefficient at high carrier density. We further demonstrate that the hole accumulation layer in exfoliated SnSe transistors exhibits a field effect mobility of up to 250 cm(2)/V s at T = 1.3K. SnSe is thus found to be a high-quality quasi-two-dimensional semiconductor ideal for thermoelectric applications.

Item Type:	Journal Article
Creators:	Creators Email ORCID ORCID Put Code Tayari, V. UNSPECIFIED UNSPECIFIED UNSPECIFIED Senkovskiy, B. V. UNSPECIFIED UNSPECIFIED UNSPECIFIED Rybkovskiy, D. UNSPECIFIED UNSPECIFIED UNSPECIFIED Ehlen, N. UNSPECIFIED UNSPECIFIED UNSPECIFIED Fedorov, A. UNSPECIFIED UNSPECIFIED UNSPECIFIED Chen, C. -Y. UNSPECIFIED UNSPECIFIED UNSPECIFIED Avila, J. UNSPECIFIED UNSPECIFIED UNSPECIFIED Asensio, M. UNSPECIFIED UNSPECIFIED UNSPECIFIED Perucchi, A. UNSPECIFIED UNSPECIFIED UNSPECIFIED di Pietro, P. UNSPECIFIED UNSPECIFIED UNSPECIFIED Yashina, L. UNSPECIFIED UNSPECIFIED UNSPECIFIED Fakih, I. UNSPECIFIED UNSPECIFIED UNSPECIFIED Hemsworth, N. UNSPECIFIED UNSPECIFIED UNSPECIFIED Petrescu, M. UNSPECIFIED UNSPECIFIED UNSPECIFIED Gervais, G. UNSPECIFIED UNSPECIFIED UNSPECIFIED Grueneis, A. UNSPECIFIED UNSPECIFIED UNSPECIFIED Szkopek, T. UNSPECIFIED UNSPECIFIED UNSPECIFIED
URN:	urn:nbn:de:hbz:38-198528
DOI:	10.1103/PhysRevB.97.045424
Journal or Publication Title:	Phys. Rev. B
Volume:	97
Number:	4
Date:	2018
Publisher:	AMER PHYSICAL SOC
Place of Publication:	COLLEGE PK
ISSN:	2469-9969
Language:	English
Faculty:	Unspecified
Divisions:	Unspecified
Subjects:	no entry
Uncontrolled Keywords:	Keywords Language SINGLE-CRYSTAL SNSE; BLACK PHOSPHORUS; ELECTRICAL-PROPERTIES; POLYCRYSTALLINE SNSE; PERFORMANCE; GROWTH; SEMICONDUCTOR; MOBILITY; FIGURE; MERIT Multiple languages Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter Multiple languages
Refereed:	Yes
URI:	http://kups.ub.uni-koeln.de/id/eprint/19852