Universität zu Köln

Engler, Martin ORCID: 0000-0002-6593-0677 and Michely, Thomas (2016). Amorphous to crystalline phase transition: Onset of pattern formation during ion erosion of Si(001). Phys. Rev. B, 93 (8). COLLEGE PK: AMER PHYSICAL SOC. ISSN 2469-9969

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Abstract

The morphological evolution of Si(001) is investigated for normal incidence 2 keV Kr+ ion irradiation under ultra-high vacuum conditions as a function of temperature and ion fluence through scanning tunneling microscopy and low energy electron diffraction. Under the conditions chosen, the selvage of Si(001) amorphizes below the critical temperature T-c of 670 K, while above it remains crystalline. Below Tc the sample remains flat, irrespective of the ion fluence. Above T-c, the crystalline sample displays for fixed ion fluence and as a function of sample temperature a pronounced roughness maximum at 700 K. Around this temperature, with increasing ion fluence a strong increase of roughness as well as coarsening are observed. Pyramidal pits and mounds develop, with facets formed by Si steps and narrow reconstructed terraces. Most exciting, with increasing ion fluence the pattern reorients from pits and mounds with edges along the < 110 > directions to ridges and valleys rotated approximate to 45 degrees to the < 110 > directions.

Item Type:	Journal Article
Creators:	Creators Email ORCID ORCID Put Code Engler, Martin UNSPECIFIED orcid.org/0000-0002-6593-0677 UNSPECIFIED Michely, Thomas UNSPECIFIED UNSPECIFIED UNSPECIFIED
URN:	urn:nbn:de:hbz:38-284470
DOI:	10.1103/PhysRevB.93.085423
Journal or Publication Title:	Phys. Rev. B
Volume:	93
Number:	8
Date:	2016
Publisher:	AMER PHYSICAL SOC
Place of Publication:	COLLEGE PK
ISSN:	2469-9969
Language:	English
Faculty:	Unspecified
Divisions:	Unspecified
Subjects:	no entry
Uncontrolled Keywords:	Keywords Language MORPHOLOGY; BOMBARDMENT; DIFFUSION; NUCLEATION; EVOLUTION; GROWTH Multiple languages Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter Multiple languages
Refereed:	Yes
URI:	http://kups.ub.uni-koeln.de/id/eprint/28447