Universität zu Köln

Wahl, Ulrich ORCID: 0000-0001-7398-2904, Correia, Joao Guilherme, Costa, Angelo R. G., David-Bosne, Eric, Kappers, Menno J., da Silva, Manuel Ribeiro, Lippertz, Gertjan ORCID: 0000-0002-4061-7027, Lima, Tiago A. L., Villarreal, Renan, Vantomme, Andre ORCID: 0000-0001-9158-6534 and Pereira, Lino M. C. (2021). Lattice Location Studies of the Amphoteric Nature of Implanted Mg in GaN. Adv. Electron. Mater., 7 (9). HOBOKEN: WILEY. ISSN 2199-160X

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Abstract

Despite the renewed interest in ion implantation doping of GaN, efficient electrical activation remains a challenge. The lattice location of Mg-27 is investigated in GaN of different doping types as a function of implantation temperature and fluence at CERN's ISOLDE facility. The amphoteric nature of Mg is elucidated, i.e., the concurrent occupation of substitutional Ga and interstitial sites: following room temperature ultra-low fluence (approximate to 2 x 10(10) cm(-2)) implantation, the interstitial fraction of Mg is highest (20-24%) in GaN pre-doped with stable Mg during growth, and lowest (2-6%) in n-GaN:Si, while undoped GaN shows an intermediate interstitial fraction of 10-12%. Both for p- and n-GaN prolonged implantations cause interstitial Mg-27 to approach the levels found for undoped GaN. Implanting above 400 degrees C progressively converts interstitial Mg to substitutional Ga sites due to the onset of Mg interstitial migration (estimated activation energy 1.5-2.3 eV) and combination with Ga vacancies. In all sample types, implantations above a fluence of 10(14) cm(-2) result in >95% substitutional Mg. Ion implantation is hence a very efficient method to introduce Mg into substitutional Ga sites, i.e., challenges toward high electrical activation of implanted Mg are not related to lack of substitutional incorporation.

Item Type:	Journal Article
Creators:	Creators Email ORCID ORCID Put Code Wahl, Ulrich UNSPECIFIED orcid.org/0000-0001-7398-2904 UNSPECIFIED Correia, Joao Guilherme UNSPECIFIED UNSPECIFIED UNSPECIFIED Costa, Angelo R. G. UNSPECIFIED UNSPECIFIED UNSPECIFIED David-Bosne, Eric UNSPECIFIED UNSPECIFIED UNSPECIFIED Kappers, Menno J. UNSPECIFIED UNSPECIFIED UNSPECIFIED da Silva, Manuel Ribeiro UNSPECIFIED UNSPECIFIED UNSPECIFIED Lippertz, Gertjan UNSPECIFIED orcid.org/0000-0002-4061-7027 UNSPECIFIED Lima, Tiago A. L. UNSPECIFIED UNSPECIFIED UNSPECIFIED Villarreal, Renan UNSPECIFIED UNSPECIFIED UNSPECIFIED Vantomme, Andre UNSPECIFIED orcid.org/0000-0001-9158-6534 UNSPECIFIED Pereira, Lino M. C. UNSPECIFIED UNSPECIFIED UNSPECIFIED
URN:	urn:nbn:de:hbz:38-592278
DOI:	10.1002/aelm.202100345
Journal or Publication Title:	Adv. Electron. Mater.
Volume:	7
Number:	9
Date:	2021
Publisher:	WILEY
Place of Publication:	HOBOKEN
ISSN:	2199-160X
Language:	English
Faculty:	Unspecified
Divisions:	Unspecified
Subjects:	no entry
Uncontrolled Keywords:	Keywords Language MAGNESIUM-ION-IMPLANTATION; GALLIUM NITRIDE; DEFECTS; TOOL Multiple languages Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied Multiple languages
URI:	http://kups.ub.uni-koeln.de/id/eprint/59227