Universität zu Köln

Lee, Yongjeong, Jung, Sungyeop ORCID: 0000-0003-2669-1797, Plews, Andrew, Nejim, Ahmed, Simonetti, Olivier, Giraudet, Louis, Baranovskii, Sergei D., Gebhard, Florian, Meerholz, Klaus, Jung, Sungjune, Horowitz, Gilles and Bonnassieux, Yvan (2021). Parametrization of the Gaussian Disorder Model to Account for the High Carrier Mobility in Disordered Organic Transistors. Phys. Rev. Appl., 15 (2). COLLEGE PK: AMER PHYSICAL SOC. ISSN 2331-7019

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Abstract

Correct parameterization of the Gaussian disorder model (GDM) on spatially random sites is necessary for a complete description of charge transport in disordered materials and concomitant device characteristics. Because the GDM on spatially random sites considers both energetic and spatial disorder, it is superior to the GDM on a cubic lattice. However, analytical arguments and experimental evidence are still lacking for correct parameterization of the model over a wide range of model parameters, energetic and spatial disorder, and electric fields. We show that the model requires a set of parameters to correctly account for high mobility and its charge density dependence, and we develop such a model. The model is implemented in a numerical simulation tool for comparison with the measured device characteristics. Accurate agreement with experimental data, particularly with the high mobility values in organic fieldeffect transistors, is achieved throughout a wide range of temperature by adjusting both the localization length and the attempt-to-escape frequency.

Item Type:	Journal Article
Creators:	Creators Email ORCID ORCID Put Code Lee, Yongjeong UNSPECIFIED UNSPECIFIED UNSPECIFIED Jung, Sungyeop UNSPECIFIED orcid.org/0000-0003-2669-1797 UNSPECIFIED Plews, Andrew UNSPECIFIED UNSPECIFIED UNSPECIFIED Nejim, Ahmed UNSPECIFIED UNSPECIFIED UNSPECIFIED Simonetti, Olivier UNSPECIFIED UNSPECIFIED UNSPECIFIED Giraudet, Louis UNSPECIFIED UNSPECIFIED UNSPECIFIED Baranovskii, Sergei D. UNSPECIFIED UNSPECIFIED UNSPECIFIED Gebhard, Florian UNSPECIFIED UNSPECIFIED UNSPECIFIED Meerholz, Klaus UNSPECIFIED UNSPECIFIED UNSPECIFIED Jung, Sungjune UNSPECIFIED UNSPECIFIED UNSPECIFIED Horowitz, Gilles UNSPECIFIED UNSPECIFIED UNSPECIFIED Bonnassieux, Yvan UNSPECIFIED UNSPECIFIED UNSPECIFIED
URN:	urn:nbn:de:hbz:38-597962
DOI:	10.1103/PhysRevApplied.15.024021
Journal or Publication Title:	Phys. Rev. Appl.
Volume:	15
Number:	2
Date:	2021
Publisher:	AMER PHYSICAL SOC
Place of Publication:	COLLEGE PK
ISSN:	2331-7019
Language:	English
Faculty:	Unspecified
Divisions:	Unspecified
Subjects:	no entry
Uncontrolled Keywords:	Keywords Language FIELD-EFFECT TRANSISTORS; CHARGE-TRANSPORT; CONTACT RESISTANCE; HETEROCYCLIC OLIGOMERS; ENERGETIC DISORDER; HOPPING TRANSPORT; HOLE MOBILITY; THIN-FILMS; DEPENDENCE; CRYSTAL Multiple languages Physics, Applied Multiple languages
URI:	http://kups.ub.uni-koeln.de/id/eprint/59796