Pierret, A., Mele, D., Graef, H., Palomo, J., Taniguchi, T., Watanabe, K., Li, Y., Toury, B., Journet, C., Steyer, P., Garnier, V, Loiseau, A., Berroir, J-M, Bocquillon, E., Feve, G., Voisin, C., Baudin, E., Rosticher, M. and Placais, B. (2022). Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitride. Mater. Res. Express, 9 (6). BRISTOL: IOP Publishing Ltd. ISSN 2053-1591

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Abstract

In view of the extensive use of hexagonal boron nitride (hBN) in 2D material electronics, it becomes important to refine its dielectric characterization in terms of low-field permittivity and high-field strength and conductivity up to the breakdown voltage. The present study aims at filling this gap using DC and RF transport in two Au-hBN-Au capacitor series of variable thickness in the 10-100 nm range, made of large high-pressure, high-temperature (HPHT) crystals and a polymer derivative ceramics (PDC) crystals. We deduce an out-of-plane low field dielectric constant epsilon (parallel to) = 3.4 +/- 0.2 consistent with the theoretical prediction of Ohba et al, that narrows down the generally accepted window epsilon (parallel to) = 3-4. The DC-current leakage at high-field is found to obey the Frenkel-Pool law for thermally-activated trap-assisted electron transport with a dynamic dielectric constant epsilon (parallel to) similar or equal to 3.1 and a trap energy phi( B ) similar or equal to 1.3 eV, that is comparable with standard technologically relevant dielectrics.

Item Type: Journal Article
Creators:
CreatorsEmailORCIDORCID Put Code
Pierret, A.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Mele, D.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Graef, H.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Palomo, J.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Taniguchi, T.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Watanabe, K.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Li, Y.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Toury, B.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Journet, C.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Steyer, P.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Garnier, VUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Loiseau, A.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Berroir, J-MUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Bocquillon, E.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Feve, G.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Voisin, C.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Baudin, E.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Rosticher, M.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Placais, B.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
URN: urn:nbn:de:hbz:38-691942
DOI: 10.1088/2053-1591/ac4fe1
Journal or Publication Title: Mater. Res. Express
Volume: 9
Number: 6
Date: 2022
Publisher: IOP Publishing Ltd
Place of Publication: BRISTOL
ISSN: 2053-1591
Language: English
Faculty: Unspecified
Divisions: Unspecified
Subjects: no entry
Uncontrolled Keywords:
KeywordsLanguage
SINGLE-CRYSTALS; GRAPHENE; TRANSPORT; STRENGTHMultiple languages
Materials Science, MultidisciplinaryMultiple languages
URI: http://kups.ub.uni-koeln.de/id/eprint/69194

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