Universität zu Köln

Usachov, Dmitry Yu ORCID: 0000-0003-0390-0007, Fedorov, Alexander V., Petukhov, Anatoly E. ORCID: 0000-0001-9362-3589, Vilkov, Oleg Yu, Rybkin, Artem G., Otrokov, Mikhail M., Arnau, Andres, Chulkov, Evgueni V., Yashina, Lada V., Farjam, Mani, Adamchuk, Vera K., Senkovskiy, Boris V. ORCID: 0000-0003-1443-6780, Laubschat, Clemens and Vyalikh, Denis V. (2015). Epitaxial B-Graphene: Large-Scale Growth and Atomic Structure. ACS Nano, 9 (7). S. 7314 - 7323. WASHINGTON: AMER CHEMICAL SOC. ISSN 1936-086X

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Abstract

Embedding foreign atoms or molecules in graphene has become the key approach in its functionalization and is intensively used for tuning its structural and electronic properties. Here, we present an efficient method based on chemical vapor deposition for large scale growth of boron-doped graphene (B-graphene) on Ni(111) and Co(0001) substrates using carborane molecules as the precursor. It is shown that up to 19 at.% of boron can be embedded in the graphene matrix and that a planar C-B sp(2) network is formed. It is resistant to air exposure and widely retains the electronic structure of graphene on metals. The large-scale and local structure of this material has been explored depending on boron content and substrate. By resolving individual impurities with scanning tunneling microscopy we have demonstrated the possibility for preferential substitution of carbon with boron in one of the graphene sublattices (unbalanced sublattice doping) at low doping level on the Ni(111) substrate. At high boron content the honeycomb lattice of B-graphene is strongly distorted, and therefore, it demonstrates no unballanced sublattice doping.

Item Type:	Journal Article
Creators:	Creators Email ORCID ORCID Put Code Usachov, Dmitry Yu UNSPECIFIED orcid.org/0000-0003-0390-0007 UNSPECIFIED Fedorov, Alexander V. UNSPECIFIED UNSPECIFIED UNSPECIFIED Petukhov, Anatoly E. UNSPECIFIED orcid.org/0000-0001-9362-3589 UNSPECIFIED Vilkov, Oleg Yu UNSPECIFIED UNSPECIFIED UNSPECIFIED Rybkin, Artem G. UNSPECIFIED UNSPECIFIED UNSPECIFIED Otrokov, Mikhail M. UNSPECIFIED UNSPECIFIED UNSPECIFIED Arnau, Andres UNSPECIFIED UNSPECIFIED UNSPECIFIED Chulkov, Evgueni V. UNSPECIFIED UNSPECIFIED UNSPECIFIED Yashina, Lada V. UNSPECIFIED UNSPECIFIED UNSPECIFIED Farjam, Mani UNSPECIFIED UNSPECIFIED UNSPECIFIED Adamchuk, Vera K. UNSPECIFIED UNSPECIFIED UNSPECIFIED Senkovskiy, Boris V. UNSPECIFIED orcid.org/0000-0003-1443-6780 UNSPECIFIED Laubschat, Clemens UNSPECIFIED UNSPECIFIED UNSPECIFIED Vyalikh, Denis V. UNSPECIFIED UNSPECIFIED UNSPECIFIED
URN:	urn:nbn:de:hbz:38-400120
DOI:	10.1021/acsnano.5b02322
Journal or Publication Title:	ACS Nano
Volume:	9
Number:	7
Page Range:	S. 7314 - 7323
Date:	2015
Publisher:	AMER CHEMICAL SOC
Place of Publication:	WASHINGTON
ISSN:	1936-086X
Language:	English
Faculty:	Faculty of Mathematics and Natural Sciences
Divisions:	Faculty of Mathematics and Natural Sciences > Department of Physics > Institute of Physics II
Subjects:	no entry
Uncontrolled Keywords:	Keywords Language NITROGEN-DOPED GRAPHENE; ELECTRONIC-STRUCTURE; MONOLAYER GRAPHENE; TRANSPORT-PROPERTIES; BORON; PERFORMANCE; NI(111) Multiple languages Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary Multiple languages
Refereed:	Yes
URI:	http://kups.ub.uni-koeln.de/id/eprint/40012