Universität zu Köln

Madarevic, Ivan ORCID: 0000-0002-5552-3859, Thupakula, Umamahesh, Lippertz, Gertjan ORCID: 0000-0002-4061-7027, Claessens, Niels ORCID: 0000-0002-8863-9532, Lin, Pin-Cheng ORCID: 0000-0001-8355-5084, Bana, Harsh ORCID: 0000-0003-0722-1319, Gonzalez, Sara, Di Santo, Giovanni, Petaccia, Luca, Nair, Maya Narayanan ORCID: 0000-0001-6532-8208, Pereira, Lino M. C., Van Haesendonck, Chris and Van Bael, Margriet J. (2020). Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal alpha-Sn. APL Mater., 8 (3). MELVILLE: AMER INST PHYSICS. ISSN 2166-532X

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Abstract

In-plane compressively strained alpha-Sn films have been theoretically predicted and experimentally proven to possess non-trivial electronic states of a 3D topological Dirac semimetal. The robustness of these states typically strongly depends on purity, homogeneity, and stability of the grown material itself. By developing a reliable fabrication process, we were able to grow pure strained alpha-Sn films on InSb(100), without heating the substrate during growth nor using any dopants. The alpha-Sn films were grown by molecular beam epitaxy, followed by experimental verification of the achieved chemical purity and structural properties of the film's surface. Local insight into the surface morphology was provided by scanning tunneling microscopy. We detected the existence of compressive strain using Mossbauer spectroscopy, and we observed a remarkable robustness of the grown samples against ambient conditions. The topological character of the samples was confirmed by angle-resolved photoemission spectroscopy, revealing the Dirac cone of the topological surface state. Scanning tunneling spectroscopy, moreover, allowed us to obtain an improved insight into the electronic structure of the 3D topological Dirac semimetal alpha-Sn above the Fermi level.

Item Type:	Journal Article
Creators:	Creators Email ORCID ORCID Put Code Madarevic, Ivan UNSPECIFIED orcid.org/0000-0002-5552-3859 UNSPECIFIED Thupakula, Umamahesh UNSPECIFIED UNSPECIFIED UNSPECIFIED Lippertz, Gertjan UNSPECIFIED orcid.org/0000-0002-4061-7027 UNSPECIFIED Claessens, Niels UNSPECIFIED orcid.org/0000-0002-8863-9532 UNSPECIFIED Lin, Pin-Cheng UNSPECIFIED orcid.org/0000-0001-8355-5084 UNSPECIFIED Bana, Harsh UNSPECIFIED orcid.org/0000-0003-0722-1319 UNSPECIFIED Gonzalez, Sara UNSPECIFIED UNSPECIFIED UNSPECIFIED Di Santo, Giovanni UNSPECIFIED UNSPECIFIED UNSPECIFIED Petaccia, Luca UNSPECIFIED UNSPECIFIED UNSPECIFIED Nair, Maya Narayanan UNSPECIFIED orcid.org/0000-0001-6532-8208 UNSPECIFIED Pereira, Lino M. C. UNSPECIFIED UNSPECIFIED UNSPECIFIED Van Haesendonck, Chris UNSPECIFIED UNSPECIFIED UNSPECIFIED Van Bael, Margriet J. UNSPECIFIED UNSPECIFIED UNSPECIFIED
URN:	urn:nbn:de:hbz:38-342677
DOI:	10.1063/1.5142841
Journal or Publication Title:	APL Mater.
Volume:	8
Number:	3
Date:	2020
Publisher:	AMER INST PHYSICS
Place of Publication:	MELVILLE
ISSN:	2166-532X
Language:	English
Faculty:	Faculty of Mathematics and Natural Sciences
Divisions:	Faculty of Mathematics and Natural Sciences > Department of Physics > Institute of Physics II
Subjects:	no entry
Uncontrolled Keywords:	Keywords Language GROWTH-MORPHOLOGY; SURFACE OXIDATION; MOSSBAUER; STABILITY; TRANSITION; INSB(100); BETA Multiple languages Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied Multiple languages
Refereed:	Yes
URI:	http://kups.ub.uni-koeln.de/id/eprint/34267