Madarevic, Ivan ORCID: 0000-0002-5552-3859, Thupakula, Umamahesh, Lippertz, Gertjan ORCID: 0000-0002-4061-7027, Claessens, Niels ORCID: 0000-0002-8863-9532, Lin, Pin-Cheng ORCID: 0000-0001-8355-5084, Bana, Harsh ORCID: 0000-0003-0722-1319, Gonzalez, Sara, Di Santo, Giovanni, Petaccia, Luca, Nair, Maya Narayanan ORCID: 0000-0001-6532-8208, Pereira, Lino M. C., Van Haesendonck, Chris and Van Bael, Margriet J. (2020). Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal alpha-Sn. APL Mater., 8 (3). MELVILLE: AMER INST PHYSICS. ISSN 2166-532X

Full text not available from this repository.

Abstract

In-plane compressively strained alpha-Sn films have been theoretically predicted and experimentally proven to possess non-trivial electronic states of a 3D topological Dirac semimetal. The robustness of these states typically strongly depends on purity, homogeneity, and stability of the grown material itself. By developing a reliable fabrication process, we were able to grow pure strained alpha-Sn films on InSb(100), without heating the substrate during growth nor using any dopants. The alpha-Sn films were grown by molecular beam epitaxy, followed by experimental verification of the achieved chemical purity and structural properties of the film's surface. Local insight into the surface morphology was provided by scanning tunneling microscopy. We detected the existence of compressive strain using Mossbauer spectroscopy, and we observed a remarkable robustness of the grown samples against ambient conditions. The topological character of the samples was confirmed by angle-resolved photoemission spectroscopy, revealing the Dirac cone of the topological surface state. Scanning tunneling spectroscopy, moreover, allowed us to obtain an improved insight into the electronic structure of the 3D topological Dirac semimetal alpha-Sn above the Fermi level.

Item Type: Journal Article
Creators:
CreatorsEmailORCIDORCID Put Code
Madarevic, IvanUNSPECIFIEDorcid.org/0000-0002-5552-3859UNSPECIFIED
Thupakula, UmamaheshUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Lippertz, GertjanUNSPECIFIEDorcid.org/0000-0002-4061-7027UNSPECIFIED
Claessens, NielsUNSPECIFIEDorcid.org/0000-0002-8863-9532UNSPECIFIED
Lin, Pin-ChengUNSPECIFIEDorcid.org/0000-0001-8355-5084UNSPECIFIED
Bana, HarshUNSPECIFIEDorcid.org/0000-0003-0722-1319UNSPECIFIED
Gonzalez, SaraUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Di Santo, GiovanniUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Petaccia, LucaUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Nair, Maya NarayananUNSPECIFIEDorcid.org/0000-0001-6532-8208UNSPECIFIED
Pereira, Lino M. C.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Van Haesendonck, ChrisUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Van Bael, Margriet J.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
URN: urn:nbn:de:hbz:38-342677
DOI: 10.1063/1.5142841
Journal or Publication Title: APL Mater.
Volume: 8
Number: 3
Date: 2020
Publisher: AMER INST PHYSICS
Place of Publication: MELVILLE
ISSN: 2166-532X
Language: English
Faculty: Unspecified
Divisions: Unspecified
Subjects: no entry
Uncontrolled Keywords:
KeywordsLanguage
GROWTH-MORPHOLOGY; SURFACE OXIDATION; MOSSBAUER; STABILITY; TRANSITION; INSB(100); BETAMultiple languages
Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, AppliedMultiple languages
URI: http://kups.ub.uni-koeln.de/id/eprint/34267

Downloads

Downloads per month over past year

Altmetric

Export

Actions (login required)

View Item View Item